Yuxuan Zhang

Sr. Device Engineer at Finwave Semiconductor, Inc.
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Contact Information
us****@****om
(386) 825-5501
Location
Greater Boston
Languages
  • English Professional working proficiency
  • Chinese Native or bilingual proficiency

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Experience

    • United States
    • Semiconductor Manufacturing
    • 1 - 100 Employee
    • Sr. Device Engineer
      • Sep 2022 - Present

    • United States
    • Higher Education
    • 700 & Above Employee
    • Graduate Research Associate
      • May 2018 - Aug 2022

      My research focuses on the development of high quality GaN epitaxial films via novel MOCVD GaN epitaxy methods for power device applications. The research also involves the development of high performance vertical GaN power devices. The material and device characterization is a combined, interdisciplinary research effort including electrical engineering, applied physics, and material sciences. Electrical, optical, chemical, and microscopic characterization techniques are commonly utilized to reveal the properties of synthesized material. Fundamental knowledge from quantum mechanics, quantum electronics/optics, solid state physics, semiconductor physics, and physical chemistry will be used to solve problems related to the actual problems in my research. Show less

    • United States
    • Higher Education
    • 700 & Above Employee
    • Graduate Research Assistant
      • Aug 2017 - May 2018

    • Education Administration Programs
    • 700 & Above Employee
    • Graduate Research Assistant
      • Sep 2015 - Jun 2017

Education

  • The Ohio State University
    Doctor of Philosophy - PhD, Electrical and Electronics Engineering
    2018 - 2022
  • Penn State University
    Electrical and Electronics Engineering
    2017 - 2018
  • Xi'an Jiaotong University
    Master of Science (M.Sc.), Electrical Engineering
    2015 - 2017
  • Xi'an Jiaotong University
    Bachelor of Science - BS, Electrical and Electronics Engineering
    2011 - 2015
  • City University of Hong Kong
    exchange student, Electrical and Electronics Engineering
    2013 - 2013

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