Wayne Lin

Product Engineering, Diodes Division at VISHAY GENERAL SEMICONDUCTOR TAIWAN LTD.
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Location
Taiwan, TW
Languages
  • 中文 -
  • English -

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Experience

    • Taiwan
    • Appliances, Electrical, and Electronics Manufacturing
    • 1 - 100 Employee
    • Product Engineering, Diodes Division
      • Jan 2022 - Present
    • United States
    • Appliances, Electrical, and Electronics Manufacturing
    • 700 & Above Employee
    • R&D Director
      • Nov 2006 - Apr 2020

      - Product development for TVS, Thyristor, ESD protection arrays, IGBT, and power modules. - Fabless operations including supplier selection, price negotiation, and production planning at both wafer foundries and assembly houses. - Product development for TVS, Thyristor, ESD protection arrays, IGBT, and power modules. - Fabless operations including supplier selection, price negotiation, and production planning at both wafer foundries and assembly houses.

    • 工程處處長
      • Jul 2002 - Nov 2006

      Engineering services to assist engaging fables design houses and wafer foundry fabs. - Representing wafer foundries of 5", 6" and 8" wafer fabs in Korea, Japan, Taiwan, and China - Provide technical supports to design houses on bipolar, CMOS, HV CMOS, BCD, eFlash processes - Assist design and tape-out on bipolar IC, power management analog IC, panal driver IC, embedded ROM, OTP, MTP, EEPROM, and flash products. Engineering services to assist engaging fables design houses and wafer foundry fabs. - Representing wafer foundries of 5", 6" and 8" wafer fabs in Korea, Japan, Taiwan, and China - Provide technical supports to design houses on bipolar, CMOS, HV CMOS, BCD, eFlash processes - Assist design and tape-out on bipolar IC, power management analog IC, panal driver IC, embedded ROM, OTP, MTP, EEPROM, and flash products.

    • Semiconductor Manufacturing
    • 1 - 100 Employee
    • Project Manager, Technology Development
      • Mar 2000 - Jul 2002

      Project management for technology transfer and new process/product development projects in both tsmc and UMC. - Joint-develop 0.13um process with UMC - Transfer 0.25um, 20GHz BiCMOS process into tsmc - Transfer 0.6um 30V BCD process into tsmc Project management for technology transfer and new process/product development projects in both tsmc and UMC. - Joint-develop 0.13um process with UMC - Transfer 0.25um, 20GHz BiCMOS process into tsmc - Transfer 0.6um 30V BCD process into tsmc

    • United States
    • 1 - 100 Employee
    • Senior Engineer, Technology Development
      • Jan 1998 - Mar 2000

      Developing HV CMOS, BiCMOS and BCD processes Developing HV CMOS, BiCMOS and BCD processes

    • Business Consulting and Services
    • 1 - 100 Employee
    • Department Manager of Process Engineering and R&D
      • Aug 1992 - Jul 1995

      Developing small signal and power BJT, JFET, Schottky diodes, and VDMOS Developing small signal and power BJT, JFET, Schottky diodes, and VDMOS

Education

  • San Jose State University
    MSEE, E.E.
    1995 - 1997
  • 國立臺灣大學
    Bachelor of Science - BS, Chemical Engineering
    1988 - 1992

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