Experience

Far UV (222nm) Disinfection Lighting Solutions

• United States
• Appliances, Electrical, and Electronics Manufacturing
• 1 - 100 Employee

• Senior Electrical Engineer and Materials Scientist

  • Sep 2020 - Present



Smiths Interconnect

• United Kingdom
• Appliances, Electrical, and Electronics Manufacturing
• 500 - 600 Employee

• Advanced Materials Engineer

  • Jan 2018 - Jun 2020

  • Research and development of spring probes, connectors, RF devices and semiconductor test sockets • Technology enhancement of company products • Writing white papers, filing patent of new technology, oral presentations in international conferences • Introduced new technologies such as inkjet/super inkjet printing, additive manufacturing (3D printing, micro molding, extrusion), silver/gold maxphase plating, packaging of bare silicon die etc. for company products • Collaborating design engineer, test engineer and product engineer Show less



National Renewable Energy Laboratory

• United States
• Research Services
• 700 & Above Employee

• Project Assistant

  • Jul 2008 - Dec 2011

  1. Tested the Solar Cells and wafers of various companies like MEMC Electronic Materials, Solarworld, Solexel, BP Solar, Sixtron Advanced Materials, Ferro Electronic materials, Moserbaer etc. 2. Designed the electrical part of Optical Processing Furnace (OPF) 3. Actual measurement of diffusion length of silicon wafers if the wafer thickness is less than diffusion length 4. Performance limitation set by defect cluster (DC) in multi crystalline solar cells 5. Influence of Defects and Defect Distributions in multicrystalline Silicon on Solar Cell Performance 6. A new, ultrafast technique for mapping dislocation density in large-area, single-crystal and multicrystalline Si wafers Show less



New Jersey Institute of Technology

• United States
• Higher Education
• 700 & Above Employee

• PhD student

  • Jul 2007 - Jul 2008

  1. Electrical Characterization of Metal Gate/High-k Dielectrics on GaAs Substrate The electrical characterization of metal/high-k/GaAs MOS structures at low temperatures was done using C-V, I-V and conductance measurements to analyze the interface properties. The interface trap densities for Ti-Au/HfO2/GaAs (both n-MOS and p-MOS) and Be-Au/HfO2/GaAs (n-MOS) capacitors were compared to evaluate the effect of metal gate. 2. Extract the model parameters for 0.25 μm NMOS device using short channel current model used the nanohub for parameters exraction. Advisor: Prof. H. Hanafi Show less



Indian Institute of Technology, Kanpur

• India
• Higher Education
• 700 & Above Employee

• Master Student

  • May 2005 - Jul 2007

  Fabrication and Characterization of Organic Thin Film Transistor (OTFT) using composite dielectric of Alumna and PMMA. Advisor: Prof. B.Mazhari, Prof. J.Kumar The advantages of Organic Electronic devices are low temperature processing, low cost substrate. We showed the devices worked for 30 days. Flexible and rollable devices were also fabricated. Fabrication process was done in class 1000 cleanroom. Fabrication and Characterization of Organic Thin Film Transistor (OTFT) using composite dielectric of Alumna and PMMA. Advisor: Prof. B.Mazhari, Prof. J.Kumar The advantages of Organic Electronic devices are low temperature processing, low cost substrate. We showed the devices worked for 30 days. Flexible and rollable devices were also fabricated. Fabrication process was done in class 1000 cleanroom.