Experience

IM2NP CNRS UMR 7334

• France
• Think Tanks
• 1 - 100 Employee

• Researcher Phd Candidate

  • 2022 - Present



INSA Lyon - Institut National des Sciences Appliquées de Lyon

• France
• Higher Education
• 700 & Above Employee

• Internship : Multi-physical characterization of GaN-based vertical schottky diodes

  • Apr 2021 - Oct 2021

  - Study of vertical GaN-based Schottky diodes in order to better understand the mechanisms at the origin of the electrical limitations. - Characterization by µRaman Spectroscopy and SEM to identify structural or electrical defects and stress. - Electrical I-V characterization of diodes. - Programming and analysis of the results using Matlab and Origin. - Study of vertical GaN-based Schottky diodes in order to better understand the mechanisms at the origin of the electrical limitations. - Characterization by µRaman Spectroscopy and SEM to identify structural or electrical defects and stress. - Electrical I-V characterization of diodes. - Programming and analysis of the results using Matlab and Origin.