Shuogang Huang

Senior Process Engineer at Intermolecular
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Contact Information
us****@****om
(386) 825-5501
Location
Santa Clara, California, United States, US

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Experience

    • United States
    • Nanotechnology Research
    • 1 - 100 Employee
    • Senior Process Engineer
      • Jan 2012 - Feb 2014

      Heavily involved in workflow and process development of Customer Development Programs. From early timeline design, process definition, feasibility, modeling, through executing the agreed timeline, data analysis, and customer presentation. Work closely with internal engineers and customer teams to verify the functionalities of new materials, process, and devices to meet their specifications, and present robust technical results and conclusions to customers. o Extreme Ultraviolet Lithography… Show more Heavily involved in workflow and process development of Customer Development Programs. From early timeline design, process definition, feasibility, modeling, through executing the agreed timeline, data analysis, and customer presentation. Work closely with internal engineers and customer teams to verify the functionalities of new materials, process, and devices to meet their specifications, and present robust technical results and conclusions to customers. o Extreme Ultraviolet Lithography mask clean for Samsung. Design DOE with acids, bases, organic solvents and surfactants to formulate an etchant can clean EUV photoresist and carbon contamination on Ruthenium/MoSi multilayer/Silica mask, without damaging ARC(TaN), Absorber layers and Ru cap. o Germanium passivation study for TSMC. Develop workflow for improving the electrical properties of the Ge/HK stack by using ammonium sulfide (NH4)2S as surface treatment. The monolayer passivated Ge-S surface is studied by XPS, AFM, ATR-FTIR and contact angle. The electrochemistry approach is investigated by applying voltage on Ge substrate in both acidic and basic electrolytes. Find a process with solvents to clean organic residues at room temperature without damaging GeOx surface. o HPC Tool Demonstration for TSMC FEOL and MOL processes. Provide wide chemistry screen, process window and work flow stability investigation on Intermolecular F-20 platform. Determine etch rates (HfOx, PECVD SiO2, SiN, NiSi, Al), selectivity and metrology that meet cleaning targets for FEOL. Evaluate dielectric and metal film loss due to MOL polymer residue cleaning chemistry. o Post-CMP clean for Toshiba/Mitsubishi Chemical. Plan and execute DOE with solvents, surfactants, inhibitors and chelators to optimize existing formulations in post-CMP clean on copper surface. Particle removal efficiency, copper etch rate and organic layer thickness are studied by various metrology tools.

    • Senior Process Engineer
      • Jan 2010 - Dec 2011

      o Find alternative formulation or chemistry on TiN clean for IBM. Screen on TiN/Al, HfSiO/HfO2, BARC and PR stack to identify candidate formulations meet criteria of etch rate, adhesion, undercut and chemical property change. o Post-gate patterning clean for Global Foundries. Develop work flow to remove polymer and HK residues on active/field oxide by adjusting SiO2/HfO2/TiN/a-Si/SiN etch rates for selectivity. Establish a wet etch process to fully remove ONO layer while maintaining the… Show more o Find alternative formulation or chemistry on TiN clean for IBM. Screen on TiN/Al, HfSiO/HfO2, BARC and PR stack to identify candidate formulations meet criteria of etch rate, adhesion, undercut and chemical property change. o Post-gate patterning clean for Global Foundries. Develop work flow to remove polymer and HK residues on active/field oxide by adjusting SiO2/HfO2/TiN/a-Si/SiN etch rates for selectivity. Establish a wet etch process to fully remove ONO layer while maintaining the photoresist condition in its original profile without damage. Form Terraced Oxides(HfO2 on SiO2) with HF, determined EOT of stack, screen Effective Work Function (EWF) of metal gate (PVD) on HK dielectric. o FEOL SC1 polymer removal for LAM Research. Design DOE with temperature and concentrations to check the effectiveness and sensitivity of SC1 cleans TiN, Ploy-Si, thermoxide and native oxide on Si for minimum thickness loss. o Peeling/cleaning phtotresist on dry/liquid acrylic coated wafer at elevated temperature for Eastman Chemical. o Sigma Etch DOE for UMC. Develop work flows for anisotropic etch of undoped and doped PolySi samples by combining rapid thermal annealing with wet etch. Observe substrate characteristics change at low temperature oxidation vs. high temperature spike annealing. Overcome metrology challenge for non uniform doping concentration by correlating XRF with Effective media approximation and Gaussian Oscillator ellipsomter model. o Materials discovery program to find suitable solvents and additives for BASF FEOL post-implant photo resist strip. o Formulate photoresist with Fujifilm source chemistry and formulation ratios. o Demonstrate High Productivity Combinatorial methodology in the area of High Dose Implant Photoresist Strip for ATMI.

    • Characterization Engineer
      • Dec 2007 - Dec 2009

      Responsible for the characterization, and qualification of Intermolecuar high-productivity combinatorial R&D equipment. o Develop stress test for the Intermolecualr Tempus Wet Workflow product line, design statistically robust experiments to increased tool up-time, reliability, and performance. o Modify hardware and software components of Intermolecular wet process systems to perform demonstrations and meet customer expectations. o Release processes as Best Known Methods to meet… Show more Responsible for the characterization, and qualification of Intermolecuar high-productivity combinatorial R&D equipment. o Develop stress test for the Intermolecualr Tempus Wet Workflow product line, design statistically robust experiments to increased tool up-time, reliability, and performance. o Modify hardware and software components of Intermolecular wet process systems to perform demonstrations and meet customer expectations. o Release processes as Best Known Methods to meet customer wafer reinsertion need and to strengthen their business position. o Train and assist field engineers to be able to transfer the headquarter learning to the field. Travel to customer sites to diagnose tool performance issues, make mechanical/electrical repairs, write protocols/recipes for the applications, and documentation requirements.

Education

  • The George Washington University
    Doctor of Philosophy (Ph.D.), Condensed Matter Physics
    2001 - 2008

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