Mustafa Shqair

Postdoctoral Researcher at Laboratoire plasma et conversion d'énergie (Laplace )
  • Claim this Profile
Contact Information
us****@****om
(386) 825-5501
Location
Toulouse, Occitanie, France, FR
Languages
  • Arabic Native or bilingual proficiency
  • English Professional working proficiency
  • French Limited working proficiency

Topline Score

Topline score feature will be out soon.

Bio

Generated by
Topline AI

You need to have a working account to view this content.
You need to have a working account to view this content.

Credentials

  • Best Paper Award at the 34rd European Symposium on Reliability of Electron Devices and Physics (ESREF 2023)
    ESREF2023 international conference
    Oct, 2023
    - Nov, 2024
  • MATLAB Certified
    MATLAB Coding
    Jun, 2023
    - Nov, 2024
  • Materiaux 2022 international conference participation
    Matériaux 2022
    Oct, 2022
    - Nov, 2024
  • ESREF2022 international conference participation
    ESREF2022 international conference
    Sep, 2022
    - Nov, 2024
  • "École thématique suivante organisée par l’IFSeM" participation
    Centre national de la recherche scientifique
    Jun, 2022
    - Nov, 2024
  • EuroSimE international conference participation
    EuroSimE international conference
    Apr, 2022
    - Nov, 2024
  • IEEE Certificate for completing an educational program
    IEEE
    Apr, 2022
    - Nov, 2024
  • Journées des Electroniques de Puissance (JEP 2022) attendance
    Centre national de la recherche scientifique
    Mar, 2022
    - Nov, 2024
  • ANSYS software Training
    École normale supérieure Paris-Saclay
    May, 2021
    - Nov, 2024

Experience

    • France
    • Research Services
    • 1 - 100 Employee
    • Postdoctoral Researcher
      • Feb 2023 - Present

      Analyzing the limits of use of SiC MOSFET transistors in extreme accidental conditions such as short circuits by applying multiphysics simulations that allow to study in particular the zones of appearance of melting aluminum source electrodes and the resulting extreme thermomechanical stresses that cause SiO2 cracking. Analyzing the limits of use of SiC MOSFET transistors in extreme accidental conditions such as short circuits by applying multiphysics simulations that allow to study in particular the zones of appearance of melting aluminum source electrodes and the resulting extreme thermomechanical stresses that cause SiO2 cracking.

    • France
    • Higher Education
    • 700 & Above Employee
    • Doctoral Student
      • Oct 2019 - Nov 2022

      - Analyzing EBSD data of accelerated aged IGBT topside metallic contacts using ATEX software. - Using the MATLAB software to plot and fit the curves of the EBSD data. - Finding links between the parameters of physical models (CZM) used to model the crack progress, the direct reason behind the failure of IGBT devices, and physicochemical and microstructural properties. - Modeling the crack evolution at topside metallic contacts in IGBT devices when being aged using the ANSYS APDL software after linking the parameters of physical models (CZM) to physicochemical and microstructural properties. Show less

    • France
    • Research
    • 200 - 300 Employee
    • Internship Trainee
      • Mar 2019 - Aug 2019

      - Constructing a general bibliography about the failure processes at topside metallic contacts in IGBT semiconductor devices caused by thermomechanical fatigue. - Analysing the microstructural evolutions at the wire-metallization metallic contacts. - Developing a model understanding the procedure of grain boundary grooving of aluminum grains that compose the wire-metallization contacts using mathematical equations including physicochemical material properties. - Constructing a general bibliography about the failure processes at topside metallic contacts in IGBT semiconductor devices caused by thermomechanical fatigue. - Analysing the microstructural evolutions at the wire-metallization metallic contacts. - Developing a model understanding the procedure of grain boundary grooving of aluminum grains that compose the wire-metallization contacts using mathematical equations including physicochemical material properties.

    • Lebanon
    • Higher Education
    • 200 - 300 Employee
    • Internship Trainee
      • Mar 2018 - Aug 2018

      - Making a general bibliography about kidney failure reasons and how using the adsorption method could be a solution. - Doing experiments (XRD-Zetametry-UV spectroscopy) to study the efficiency of zeolite’s adsorption (mesoporous materials) on uremic toxins in different media. - Realizing the efficiency of zeolites in adsorbing uremic toxins, particularly urea. - Making a general bibliography about kidney failure reasons and how using the adsorption method could be a solution. - Doing experiments (XRD-Zetametry-UV spectroscopy) to study the efficiency of zeolite’s adsorption (mesoporous materials) on uremic toxins in different media. - Realizing the efficiency of zeolites in adsorbing uremic toxins, particularly urea.

Education

  • École normale supérieure Paris-Saclay
    Doctor of Philosophy - PhD, Reliability of semiconductor power modules metallic interconnections
    2019 - 2022
  • Lebanese University - Faculty of Sciences
    Master's degree - 2nd year, Physical Chemistry
    2018 - 2019
  • Lebanese University - Faculty of Sciences
    Master's degree- 1st year, Materials Chemistry
    2017 - 2018
  • Lebanese University - Faculty of Sciences
    Bachelor's degree, Chemistry
    2014 - 2017

Community

You need to have a working account to view this content. Click here to join now