Experience

Azurewave Technology

• Appliances, Electrical, and Electronics Manufacturing
• 1 - 100 Employee

• Project Manager

  • Sep 2011 - Present

  main work: 4G LTE module LTE module development - Hardware design and development - RF/Protocol testing Operator certification (Verizon Wireless, US/ China Mobile, China): - Main contact point (in technology/marketing/legal) of Verizon Wireless, VZW-authorized testing Labs., and chipset partners - Module agreement negotiation (VZW) - Main contact point (in technology/marketing/legal) of CMCC and CTTL - Engagement of contact network (CMCC and CTTL) - Cross… Show more main work: 4G LTE module LTE module development - Hardware design and development - RF/Protocol testing Operator certification (Verizon Wireless, US/ China Mobile, China): - Main contact point (in technology/marketing/legal) of Verizon Wireless, VZW-authorized testing Labs., and chipset partners - Module agreement negotiation (VZW) - Main contact point (in technology/marketing/legal) of CMCC and CTTL - Engagement of contact network (CMCC and CTTL) - Cross team communication and leadership 3G/LTE IP Royalty (IPR) - Main contact point for 3G IPR agreement negotiation (Qualcomm Technology Licensing, US) - Main contact point for LTE IPR agreement negotiation (Billion) New business evaluation - Market/technology/competitive advantage study - 5G exploration study - Business plan for investors Show less main work: 4G LTE module LTE module development - Hardware design and development - RF/Protocol testing Operator certification (Verizon Wireless, US/ China Mobile, China): - Main contact point (in technology/marketing/legal) of Verizon Wireless, VZW-authorized testing Labs., and chipset partners - Module agreement negotiation (VZW) - Main contact point (in technology/marketing/legal) of CMCC and CTTL - Engagement of contact network (CMCC and CTTL) - Cross… Show more main work: 4G LTE module LTE module development - Hardware design and development - RF/Protocol testing Operator certification (Verizon Wireless, US/ China Mobile, China): - Main contact point (in technology/marketing/legal) of Verizon Wireless, VZW-authorized testing Labs., and chipset partners - Module agreement negotiation (VZW) - Main contact point (in technology/marketing/legal) of CMCC and CTTL - Engagement of contact network (CMCC and CTTL) - Cross team communication and leadership 3G/LTE IP Royalty (IPR) - Main contact point for 3G IPR agreement negotiation (Qualcomm Technology Licensing, US) - Main contact point for LTE IPR agreement negotiation (Billion) New business evaluation - Market/technology/competitive advantage study - 5G exploration study - Business plan for investors Show less



National Chiao Tung University

• Taiwan
• Higher Education
• 700 & Above Employee

• Postdoctoral Researcher

  • Feb 2009 - Jul 2011

  High-Speed Sb-based HFETs for wireless communication applications - team leader - Band structure design: breakdown enhancement by band gap engineering - EPI structure design (MBE): high-resistance AlSb buffer layer design, active layer design for high speed and high breakdown operation - Development of device processing technology: 1) etching of Sb-based materials, 2) oxidation issue: device passivation, 3) E-beam lithography High-Speed Sb-based HFETs for wireless communication applications - team leader - Band structure design: breakdown enhancement by band gap engineering - EPI structure design (MBE): high-resistance AlSb buffer layer design, active layer design for high speed and high breakdown operation - Development of device processing technology: 1) etching of Sb-based materials, 2) oxidation issue: device passivation, 3) E-beam lithography



Visual Photonics Epitaxy Co Ltd (2455)

• Wireless Services
• 1 - 100 Employee

• Project Manager

  • Feb 2008 - Dec 2008

  AlGaInP-based high-brightness LED devices AlGaInP-based high-brightness LED devices



Industrial Technology Research Institute (ITRI)(工業技術研究院, 工研院)

• Taiwan
• Research Services
• 700 & Above Employee

• Project Leader

  • Mar 2006 - Jan 2008

  Main work 1: GaN-based high-power HFETs on Si substrate - Device layout design (high power application), device fabrication, device characterization (dc/pulse/RF small-signal) - Development of device processing technology: 1) high breakdown dielectrics, 2) field plate fabrication for high-power application - Device fundamental issue: 1) layout geometry design, 2) field plate design - International collaboration with Japanese and French material growers/scientists Main… Show more Main work 1: GaN-based high-power HFETs on Si substrate - Device layout design (high power application), device fabrication, device characterization (dc/pulse/RF small-signal) - Development of device processing technology: 1) high breakdown dielectrics, 2) field plate fabrication for high-power application - Device fundamental issue: 1) layout geometry design, 2) field plate design - International collaboration with Japanese and French material growers/scientists Main work 2: GaN-based AC LED devices Show less Main work 1: GaN-based high-power HFETs on Si substrate - Device layout design (high power application), device fabrication, device characterization (dc/pulse/RF small-signal) - Development of device processing technology: 1) high breakdown dielectrics, 2) field plate fabrication for high-power application - Device fundamental issue: 1) layout geometry design, 2) field plate design - International collaboration with Japanese and French material growers/scientists Main… Show more Main work 1: GaN-based high-power HFETs on Si substrate - Device layout design (high power application), device fabrication, device characterization (dc/pulse/RF small-signal) - Development of device processing technology: 1) high breakdown dielectrics, 2) field plate fabrication for high-power application - Device fundamental issue: 1) layout geometry design, 2) field plate design - International collaboration with Japanese and French material growers/scientists Main work 2: GaN-based AC LED devices Show less