Fei Yan

Sr Manager, System Industrial Engineering at Meta
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Contact Information
us****@****om
(386) 825-5501
Location
San Francisco Bay Area, US
Languages
  • Chinese Native or bilingual proficiency
  • English Full professional proficiency

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Experience

    • French Polynesia
    • Law Practice
    • 1 - 100 Employee
    • Sr Manager, System Industrial Engineering
      • May 2022 - Present

      Manage NPI TPM teams covering both FATP and display optics (waveguide, light engine, eye tracking) for AR glasses Manage NPI TPM teams covering both FATP and display optics (waveguide, light engine, eye tracking) for AR glasses

    • Indonesia
    • Software Development
    • 1 - 100 Employee
    • Manager, Manufacturing Process Engineering - Display
      • Oct 2018 - May 2022

      - Managed a team in US and Asia for display/touch manufacturing at multiple vendors across different line of business.- Led equipment fixture DFM review, qualification, and process development from engineering builds to line qualification to final MP.- Experienced with wafer fab and SMT process, flex bonding, lamination pressing, PSA activation, adhesive dispensing and curing, laser ablation, laser cutting, optical film coating, and roll-to-roll processes.- Automated Optical Inspection (AOI) and tester automation design, qualification and MP implementation.- Drove contract manufacturers on MP fab layout and automation, factory MES system and OEE system, and yield improvement FACA activities.- Product released: iPhone 7/7 Plus, iPhone X, iPhone XR, iPhone 11, Apple Watch Series 4, Apple Watch Series 5, HomePod mini, iPad Pro 2021, MacBook Pro 2021.

    • Advanced Display Manufacturing Engineer
      • Oct 2015 - Oct 2018

    • United States
    • Semiconductor Manufacturing
    • 700 & Above Employee
    • Senior Process Engineer
      • Oct 2011 - Oct 2015

      Silicon Semiconductor Group (SSG)• PECVD process development for SiO2 and Si3N4 dielectric films for 3D staircase NAND technology.• Process optimization using DOE analysis on various plasma, flow and chamber parameters.• Support customer tool CIP and troubleshooting.Solar Thin Film Deposition (TFD) Group• Key member in developing high-throughput inline PECVD system for Al2O3 and Si3N4 passivation stack films for rear side passivation on PERC structure solar cells.• Key Account Technologist (KAT) team member and led the effort to start up beta tools at Tier 1 customer sites (Taiwan and China). Responsible for customer whole PERC line optimization and tuning. FAT of first beta tool in eight months.• Product and process development for a high throughput in-line laser ablation tool.• Led daily process activities in the integration team to maintain solar pilot line, including wet process, diffusion, metallization and many metrology tools.• Familiar with AKT Display PECVD system for Si3N4 and amorphous Si deposition for PERC and HJT cell technology.

    • United States
    • Research Services
    • 700 & Above Employee
    • Postdoctoral Researcher
      • May 2010 - Sep 2011

      • Lead member of NREL project to develop state-of-the-art solar cell characterization techniques including photoluminescence imaging, electroluminescence imaging, and illuminated and dark lock-in thermography. These techniques have been applied to various PV technologies including wafer silicon, thin-film silicon, CIGS, CZTS and CdTe.• Collaboration with NREL internal teams, university labs and industry companies for process control and failure analysis.• Expert on solar processing and characterization techniques.

    • United States
    • Higher Education
    • 700 & Above Employee
    • Graduate Researcher
      • Sep 2002 - Dec 2009

      Semiconductor Material Optical and Electrical Characterizations• Collaborated with industrial leaders including CREE, II-VI, Dow Corning and several global research institutes on photoluminescence from impurities and defects in SiC and GaN at temperature range from 1.5 K to room temperature.• Experienced with various CCD detectors and spectrometers in different wavelength regions from near UV to far infrared.• Set up time resolved photoluminescence measurements using pulsed Nd-YAG laser.• Experienced with four-point probe resistivity, C-V and I-V measurements.• PVD metal coating using sputtering, e-beam and thermal evaporations.• Designed and fabricated novel cutting tools for ultra-precision machining.Nanostructure Fabrication and Characterization• Fabricated nano porous SiC and GaN using electrochemical etching and RIE.• Sample morphology characterization using SEM and AFM.

    • China
    • Higher Education
    • 700 & Above Employee
    • Student Researcher
      • Jan 2000 - Jul 2002

      CVD heteroepitaxial growth of SiC on Si substrates and GaN on Sapphire substrates• Growth of Si, SiC and GaN thin films on different substrates by LPCVD.• Characterization of epitaxial layers by XRD, Raman, AES depth profile, PL, SEM, AFM, Hall-effect measurement, etc. CVD heteroepitaxial growth of SiC on Si substrates and GaN on Sapphire substrates• Growth of Si, SiC and GaN thin films on different substrates by LPCVD.• Characterization of epitaxial layers by XRD, Raman, AES depth profile, PL, SEM, AFM, Hall-effect measurement, etc.

Education

  • University of Pittsburgh
    Ph.D., Physics
    2004 - 2009
  • University of Pittsburgh
    M.S., Physics
    2002 - 2004
  • Nanjing University
    B.S., Physics
    1998 - 2002

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