Experience

Ayar Labs

• United States
• Computer Hardware Manufacturing
• 1 - 100 Employee

• Principal Engineer Laser Development and Validation

  • Jun 2020 - Present

  Development and manufacturing of laser module powering 4Gbps in-package (chip to chip) optical IO. Team lead managing external and internal stakeholders. Laser design and validation, new technology development, integration, manufacturing and packaging. New product development, reliability, failure analysis. InP based high power, multiwavelength laser arrays. Development and manufacturing of laser module powering 4Gbps in-package (chip to chip) optical IO. Team lead managing external and internal stakeholders. Laser design and validation, new technology development, integration, manufacturing and packaging. New product development, reliability, failure analysis. InP based high power, multiwavelength laser arrays.



Array Photonics

• United States
• Semiconductor Manufacturing

• Senior Member of Technical Team - Laser Program Manager

  • Nov 2019 - May 2020

  Technical lead and management of laser program – IR VCSEL arrays (1250-1450 nm) • Device design and modelling, DOE iterations, epi process engineering, device mask layouts, fabrication and test flow; data analysis, failure analysis, technical problem solving. • Responsible for reaching internal goals and milestones, enhancing IP portfolio. • Scheduling and integration of internal and external epitaxy, material characterization, fab process, backend, packaging, test and pilot production; utilize external consultants. • To identify and acquire equipment, processes and personnel needed – software, epi characterization, aperture oxidation, WLBI, back end (cleaving) and packaging, test. • Participation in hiring key team members; on-boarding, mentoring and guiding engineers. • Prototype of GaAs based 1320 nm intracavity contact VCSEL arrays utilizing dilute nitride quantum wells with 1.2 mW output per emitter, 800 hours of continuous operation. • Management of functional and successful program for timely product development. • Implemented epitaxial control for cavity thickness matching (in situ + ex situ reflectivity, TMM), background doping levels. • Established intracavity contact fabrication process – ICP dry etch, designed engineering masks (KLayout), acquired and utilized internal aperture oxidation process tool. • Crosslight (VCSEL) and Harold (FP) laser device simulations. Show less



Solar Junction Corporation

• United States
• Semiconductor Manufacturing
• 1 - 100 Employee

• Senior Member of Technical Team

  • Apr 2019 - Nov 2019

  Technical lead of LASER development program. Device design, epitaxial growth, material characterization and processing, device fabrication process design, device layout, fabrication process control, device characterization and data processing. Intracavity III-V VCSEL laser development for wavelengths spanning 1150-1550 nm implementing dilute nitride materials.

• Member of Technical Team

  • Aug 2015 - Mar 2019

  My Role:• Exploring of new application areas for dilute nitride technology – detectors, FPA arrays, avalanche photodiodes and quantum wells for laser applications.• Participation in development of epitaxial growth technology and space solar cell product:• Dilute nitride alloy optimization and integration in multijunction solar cell (background doping, annealing).• Implementation of modelling methods in material and device development • Introduction of novel approaches to reach 33% efficiency in space solar cell product via hybrid epitaxy combining MBE and MOCVD. Achievements:• Established R&D program for dilute nitride photonics development – visible to 1600 nm IR sensors on GaAs substrate – device design, mask layout, device fabrication, test facility. • Low dark current (nA level), 0.8 A/W (1300 nm) p-i-n photodiodes. • Investigated options for fabrication of dilute nitride imaging arrays (FPA). • Initiated dilute nitride QW development – epi, FP laser test device process and test. • Identified degradation mechanisms in space solar cells.• Proposed multiple solutions for improving space cell efficiency by use of alternative epitaxial approaches (Ge and InGaP sub-cells).• Implemented electrochemical profiling for active dopant profiling and background levels.• Comsol thermomechanical models for laser annealing, through wafer via device process, SMCC solar cell, diffusion, electrical and optical models – improved efficiency, device yield.• Supported technology transfer to investor’s organizations (KACST) – tutoring engineers. Show less



Translucent Inc

• United States
• Semiconductor Manufacturing

• Photovoltaic Product and Technology Development Manager

  • Jul 2013 - Jul 2015

  My Role:I was responsible for core technology and CPV solar cell product development, including:• Device design, epitaxial growth of group IV subcells, epitaxial overgrowth of III-V subcells by MOCVD, device fabrication and processing, final device test• Coordination of multiple cross functional teams, managing project tasks • Collaboration with key external partners, establishing relationships, further cooperation.• Mid and long term planning of group IV CVD technology for solar cell and photonic device production. • Recruiting applicants for positions in the photovoltaic group.Accomplishments:• Demonstrated world's first multijunction solar cell utilizing 1.0 eV SiGeSn junction. • Engineered 1eV bandgap Si-Ge-Sn alloys for future 50%+ high efficiency concentrator solar cells – bandgap tuning at constant lattice parameter approach.• Applied doping schemes to obtain both p and n type SiGeSn for base and emitter. • Integrated III-V MOCVD technology on Ge/Si templates - growth, device fabrication, measurement; applied to InGaAs/InGaP CPV solar cells on Ge/Si.• Milestones of funding ASI grant reached, delivered on time and within budget. Show less

• Senior Materials Engineer

  • Jun 2011 - Jun 2013

  My Role:My main task was to implement SnD4 based CVD technology for synthesis of Ge and Ge-Sn on Si substrates in industrial environment.I have contributed to engineering of bow controlling REO materials for MOCVD growth of GaN on Si by performing the structural analysis of grown layers. Accomplishments:• Transferred CVD process from Arizona State Univ. – securing reliable gas source supplies, equipment set up, growth conditions tuning, materials analysis and testing.• Built custom UHV-CVD reactor with large format (6”) multiple wafer arrangement.• Developed growth process for production of Ge on Si templates – yield, uniformity, economy and planning.• Established relations with partners to utilize Ge on Si templates for III-V (InGaAs) nucleation and subsequent solar cell integration. Show less



Arizona State University

• United States
• Higher Education
• 700 & Above Employee

• Faculty Research Associate

  • Sep 2004 - Jun 2011

  My Role: Integration of group IV (Si-Ge-Sn) and III-V semiconductors on Si, development of group IV photonic and photovoltaic devices, exploratory materials and other tasks including: • Design, installation and maintenance of CVD and MBE tools • Construction of optical and electrical characterization setups for of semiconductor materials and devices. • Set up and maintenance of PANalytical X-pert Pro MRD high resolution XRD system. • Supervision and mentoring graduate students, managing research group laboratory. • Overseeing projects during collaborations with external industrial partners. Accomplishments: • Initiated fabrication of solar cells utilizing Ge-Sn and Si-Ge-Sn semiconductors. • First time demonstration of photoluminescence and electroluminescence from Ge-Sn alloys and devices. • Originated and led the fabrication and characterization of first photodiodes based on Sn containing group IV semiconductors exhibiting extended IR detection range. • Contributed to materials research and synthesis of novel alloys in the Si-Ge-Sn system. • Investigated routes for integration of GaAs, InGaAs, AlGaAs and GaAsSb on Si substrates via GeSn and Ge buffers – low cost substitute for bulk Ge wafers. • Explored growth of cubic SiC, Ge, and gallium azide based AlGaN on Si via ZrB2 templates. • Transferred the ZrB2 buffer layer growth for GaN on Si from laboratory scale to 4” wafer format – customized high temperature gas tolerant reactor. Show less